0218117-A2 is referenced by 18 patents and cites 5 patents.

An improved method is presented for the deposition of dielectric films in the fabrication of integrated circuits (ICs), wherein a solution of polymers derived from cyclosilazanes is employed to deposit dielectric films on semiconductor substrates by the spin-on technique. These spin-on films planarize (smooth out) underlying substrate topography and therefore are especially advantageous in multilevel metallization processes where they allow a highly uniform and continuous deposition of a subsequent layer of metallization resulting in improved yield and reliability of ICs.

Title
Cyclosilazane polymers as dielectric films in integrated circuit fabrication technology.
Application Number
EP19860112589 19860911
Publication Number
0218117 (A2)
Application Date
September 11, 1986
Publication Date
April 15, 1987
Inventor
Deprenda Ralph Louis
US
Kirtley Stephen Wakefield
US
Gupta Satish Kumar
US
Anello Louis Gene
US
Assignee
Allied
US
IPC
H01B 03/46
C08L 83/16
H01L 23/52
H01L 21/02
H01L 23/532
H01L 21/316
H01L 21/312
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