A method of forming a crystalline semiconductor film on a glass substrate is described. The method relies on heating the glass substrate to a temperature at or above its strain point during a deposition or processing of the semiconductor film. Alternatively an intermediate film of a low strain point material is deposited on the glass substrate before depositing the semiconductor material. The process relaxes stresses at temperatures above the strain point. At temperatures below the strain point, the stresses can be controlled by slow cooling and by appropriate selection of the thermal expansion coefficient. Normal soda lime glasses having low strain points may be used for the glass substrate.

Title
Forming a crystalline semiconductor film on a glass substrate
Application Number
97199467
Publication Number
1236481
Application Date
November 6, 1997
Publication Date
November 24, 1999
Inventor
P A Basore
Shi Zhengrong
M A Green
Agent
zhou beilin
Assignee
Pacific Solar
IPC
H01L 31/18
H01L 21/84
H01L 21/20
C30B 33/02
C30B 29/06
C30B 28/02
C30B 25/00
C03C 17/22